unisonic technologies co., ltd mje13003d preliminary npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2011 unisonic technologies co., ltd qw-r204-025.d high voltage fast-switching npn power transistor ? description the utc mje13003d is a npn power transistor. it is intended to be used in applications requiring medium voltage capability and high switching speeds. ? features * fast-switching and high voltage capability * dynamic parameters with low spread * high reliability * integrated antiparallel collector-emitter diode ? internal schematic diagram b (1) c (2) e (3) ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 mje13003dl-t60-k mje13003dg-t60-k to-126 b c e bulk mje13003dl-t92-b mje13003dg-t92-b to-92 b c e tape box mje13003dl-t92-k mje13003dg-t92-k to-92 b c e bulk mje13003dl-t92-r mje13003dg-t92-r to-92 b c e tape reel MJE13003DL-TA3-T mje13003dg-ta3-t to-220 b c e tube
mje13003d preliminary npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r204-025.d ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit collector- emitter voltage (v be =0) v ces 700 v collector-emitter voltage (i b =0) v ceo 400 v emitter-base voltage (i c =0, i b =0.75a, t p < 10 s) v ebo 9 v collector current i c 1.5 a collector peak current (t p < 5ms) i cm 3 a base current i b 0.75 a base peak current (t p < 5ms) i bm 1.5 a power dissipation (t c =25c) to-126 p d 40 w to-92 30 to-220 70 junction temperature t j 150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit emitter-base breakdown voltage bv ebo i e =10ma, i c =0 9 18 v collector-emitter sustaining voltage (note) v ceo ( sus ) i c =10ma, i b =0 400 v collector cut-off current i ces v ce =700v,v be =0 1 ma collector-emitter satura tion voltage (note) v ce(sat) i c =0.5 a, i b =0.1 a 0.5 v i c =1 a, i b =0.25 a 1 v i c =1.5 a, i b =0.5 a 3 v base-emitter saturati on voltage (note) v be(sat) i c =0.5 a, i b =0.1 a 1 v i c =1 a, i b =0.25 a 1.2 v dc current gain h fe i c =0.5a, v ce =5 v 8 51 i c =1 a, v ce =5 v 5 30 resistive load rise time t r v cc =125 v, i c =1 a, i b1 =0.2 a, i b2 =-0.2 a t p =25 s 1 s storage time t s 4 s fall time t f 0.7 s inductive load storage time t s i c =1 a, i b1 =0.2 a,v be =-5 v, l=50mh, v clamp =300v 0.8 s diode forward voltage v f i f =0.5 a 1.5 v note: pulse test: pulse duration 300 s, duty cycle 2 %
mje13003d preliminary npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r204-025.d ? test circurts inductive load switching test circuit i b (1) i c v ce v clamp (3) v cc v bb r bb (2) - + notes: 1. fast electronic switch 2. non-inductive resistor 3. fast recovery rectifier resistive load switching test circuit i b (1) i c v ce v cc v bb r bb (2) - + r c(2) notes: 1. fast electronic switch 2. non-inductive resistor
mje13003d preliminary npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r204-025.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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